发明名称 |
HIGH BANDGAP III-V ALLOYS FOR HIGH EFFICIENCY OPTOELECTRONICS |
摘要 |
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al1-xInxP layer, and a step-grade buffer between the substrate and at least one Al1-xInxP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al1-xInxP is reached. |
申请公布号 |
CA2814119(C) |
申请公布日期 |
2017.01.17 |
申请号 |
CA20112814119 |
申请日期 |
2011.10.12 |
申请人 |
ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
ALBERI, KIRSTIN;MASCARENHAS, ANGELO;WANLASS, MARK W. |
分类号 |
H01L33/12 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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