| 摘要 |
The process comprises immobilizing a substrate using a substrate holder on a rotary plate, and depositing a layer of source material, having sputtering gas (11) and reactive gas (8), on the substrate in a magnetron sputtering device (2, 3, 4). The rotary plate is rotated so that the magnetron sputtering device is controlled and a cylindrical source material of a magnetron electrode (5, 6, 7) is upwardly deposited to the substrate against gravity. The layers are formed form the cylindrical source material of the magnetron electrode. The method is carried out by a plasma source. The process comprises immobilizing a substrate using a substrate holder on a rotary plate, and depositing a layer of source material, having sputtering gas (11) and reactive gas (8), on the substrate in a magnetron sputtering device (2, 3, 4). The rotary plate is rotated so that the magnetron sputtering device is controlled and a cylindrical source material of a magnetron electrode (5, 6, 7) is upwardly deposited to the substrate against gravity. The layers are formed form the cylindrical source material of the magnetron electrode. The method is carried out using a plasma source. A surface of the substrate is pretreated using the plasma source, which provides effects on the substrate including adjusting a temperature of the substrate, cleaning the substrate by a degradation of an organic contaminant on the substrate and activating the surface of the substrate. A structure and/or a stoichiometry of the layer are modified by the plasma effect, where the plasma source provides effects on the layer including adjusting the temperature of a microstructure of a layer on the substrate, reducing stress layer in the layer on the substrate by minimizing a boundary layer thickness and/or a boundary layer expansion between individual layers on the substrate and activating the surface of the layer on the substrate. The plasma source is controlled by the rotary plate. The rotary plate is rotated with a velocity of 150-200 revolutions per minute. A process pressure in the magnetron sputtering device is 3x 10 -> 4>to 5x 10 -> 2>mbar. A partial pressure of the sputtering gas and/or the reactive gas in the magnetron sputtering device is controlled and/or stabilized by controlling a generator power, a generator voltage and/or a generator current. The method further comprises controlling a thickness of the layer on the substrate by optical transmission monitoring, optionally via polarized transmission measurements, optical reflection monitoring, optionally via polarized reflectance measurements, optical absorption monitoring and/or single-wavelength ellipsometry or spectral ellipsometry. The temperature of heated elements is adjusted to a cover of a device in dependence on the layer to be produced, and/or is changed during a coating process to a temperature of 50-450[deg] C. The substrate is heated to a temperature of 20-300[deg] C. An independent claim is included for an apparatus for producing particle-free layers on a moving substrate in a vacuum by magnetron sputtering. |
