发明名称 METHODS FOR PRODUCING INTEGRATED CIRCUITS USING LONG AND SHORT REGIONS AND INTEGRATED CIRCUITS PRODUCED FROM SUCH METHODS
摘要 Integrated circuits and methods for producing the same are provided. In an exemplary embodiment, a method for producing an integrated circuit includes forming a work function layer overlying a substrate and a plurality of dielectric columns. The dielectric columns and the substrate define a short region having a short region width and a long region having a long region width greater than the short region width. The work function layer is recessed in the long region to a long region work function height that is between a dielectric column top surface and a substrate top surface. The work function layer is also recessed in the short region to a short region work function height that is between the dielectric column top surface and the substrate top surface. Recessing the work function layer in the long and short regions is conducted in the absence of lithography techniques.
申请公布号 US2017012107(A1) 申请公布日期 2017.01.12
申请号 US201514795984 申请日期 2015.07.10
申请人 GLOBALFOUNDRIES, INC. ;International Business Machines Corporation 发明人 Park Chanro;Ok Injo
分类号 H01L29/49;H01L29/66 主分类号 H01L29/49
代理机构 代理人
主权项 1. A method of producing an integrated circuit comprising: forming a work function layer overlying a substrate and a plurality of dielectric columns, wherein the plurality of dielectric columns and the substrate define a short region having a short region width and a long region having a long region width greater than the short region width; forming a first organic layer overlying the work function layer; recessing the first organic layer in the long region to about the long region work function height; recessing the first organic layer in the short region to about the short region work function height; recessing the work function layer in the long region to a long region work function height, wherein the long region work function height is between a dielectric column top surface and a substrate top surface; and recessing the work function layer in the short region to a short region work function height, wherein the short region work function height is between the dielectric column top surface and the substrate top surface, and wherein recessing the work function layer in the long region and recessing the work function layer in the short region is conducted in the absence of lithography techniques.
地址 Grand Cayman KY