METHOD AND STRUCTURE OF FORMING CONTROLLABLE UNMERGED EPITAXIAL MATERIAL

摘要

A method of forming a semiconductor device that includes forming a plurality of semiconductor pillars. A dielectric spacer is formed between at least one set of adjacent semiconductor pillars. Semiconductor material is epitaxially formed on sidewalls of the adjacent semiconductor pillars, wherein the dielectric spacer obstructs a first portion of epitaxial semiconductor material formed on a first semiconductor pillar from merging with a second portion of epitaxial semiconductor material formed on a second semiconductor pillar.

主权项

1. A semiconductor device comprising:
a plurality of fin structures; a dielectric spacer in a space between adjacent fin structures of said plurality of fin structures; and an epitaxial semiconductor present on a first sidewall of a first fin structure of the adjacent fin structures and a second sidewall of a second fin structure of the adjacent fins structures, wherein the epitaxial semiconductor material that is in contact with the first and second fin structures also contacts the dielectric spacer.