发明名称 Electrostatic Discharge Protection Device Comprising a Silicon Controlled Rectifier
摘要 An electrostatic discharge protection device including a silicon controlled rectifier. In one example, the silicon controlled rectifier includes a first n-type region located in a semiconductor substrate. The silicon controlled rectifier also includes a first p-type region located adjacent the first n-type region in the semiconductor substrate. The silicon controlled rectifier further includes an n-type contact region and a p-type contact region located in the first n-type region. The silicon controlled rectifier also includes an n-type contact region and a p-type contact region located in the first p-type region. The silicon controlled rectifier further includes a blocking region having a higher resistivity than the first p-type region. The blocking region is located between the n-type contact region and the p-type contact region in the first p-type region for reducing a trigger voltage of the silicon controlled rectifier.
申请公布号 US2017012036(A1) 申请公布日期 2017.01.12
申请号 US201615177858 申请日期 2016.06.09
申请人 NXP B.V. 发明人 QUAX Guido Wouter Willem;LAI Da-Wei
分类号 H01L27/02;H01L23/528;H01L29/06 主分类号 H01L27/02
代理机构 代理人
主权项 1. An electrostatic discharge protection device comprising a silicon controlled rectifier, the silicon controlled rectifier comprising: a region having a first conductivity type located in a semiconductor substrate; a region having a second conductivity type located adjacent the region having the first conductivity type in the semiconductor substrate; a contact region of the first conductivity type and a contact region of the second conductivity type located in the region having the first conductivity type; a contact region of the first conductivity type and a contact region of the second conductivity type located in the region having the second conductivity type, and a blocking region having a higher resistivity than the region having the second conductivity type, wherein the blocking region is located between the contact region of the first conductivity type and the contact region of the second conductivity type in the region having the second conductivity type, for reducing a trigger voltage of the silicon controlled rectifier.
地址 Eindhoven NL