PRODUCTION METHOD OF SiC SINGLE CRYSTAL

摘要

The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution.

主权项

1. A production method of an SiC single crystal by a solution growth process in which a principal surface of a seed crystal is arranged to face downward and brought into contact with an Si—C solution, thereby making an SiC single crystal grow on the principal surface, wherein
the principal surface is flat, and the production method comprises: a contact step A of bringing a partial region of the principal surface into contact with a stored Si—C solution; a contact step B of leaving a contact region between the principal surface and the stored Si—C solution to expand, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A; and a growth step of making an SiC single crystal grow on the principal surface which is in contact with the stored Si—C solution.