发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 Provided is a substrate processing apparatus capable of improving thickness uniformity. The substrate processing apparatus includes a process chamber including a shower head, a feeding block including a tube to provide a source gas and a reaction gas to the shower head, and a mixing block configured to provide a channel connected between the shower head and the feeding block to mix the source gas and the reaction gas, and the mixing block includes an internal space having a cross-sectional area larger than the cross-sectional area of the tube provided in the feeding block, and a collision part provided on a path of a gas mixture of the source gas and the reaction gas to collide with the gas mixture.
申请公布号 US2017008015(A1) 申请公布日期 2017.01.12
申请号 US201615196293 申请日期 2016.06.29
申请人 WONIK IPS CO., LTD. 发明人 LA Doo Hyun;RYU Dong Ho;PARK Ju Sung;PARK Ju Sung;LEE Sang Woo
分类号 B05B1/18;B05B1/00;C23C16/455 主分类号 B05B1/18
代理机构 代理人
主权项 1. A substrate processing apparatus comprising: a process chamber comprising a shower head; a feeding block comprising a tube to provide a source gas and a reaction gas to the shower head; and a mixing block configured to provide a channel connected between the shower head and the feeding block to mix the source gas and the reaction gas, wherein the mixing block comprises: an internal space having a cross-sectional area larger than the cross-sectional area of the tube provided in the feeding block; and a collision part provided on a path of a gas mixture of the source gas and the reaction gas to collide with the gas mixture.
地址 Gyeonggi-do KR