| 发明名称 |
FINFET STRUCTURE |
| 摘要 |
A FinFET device includes a substrate and a fin structure having a semiconductor material layer over the substrate and recessed regions on side walls of the fin structure. The recessed regions have openings facing away from the fin structure. The fin structure has a bottom portion below the recessed regions that is wider than a top portion. |
| 申请公布号 |
US2017012131(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201615269946 |
申请日期 |
2016.09.19 |
| 申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
ZHAO MENG |
| 分类号 |
H01L29/78;H01L21/266;H01L29/04;H01L21/265;H01L29/06;H01L29/10 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A FinFET device, comprising:
a substrate; and a fin structure comprising a semiconductor material layer over the substrate and recessed regions on its side walls, the recessed regions having openings facing away from the fin structure. |
| 地址 |
Shanghai CN |
