| 发明名称 |
DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING DIAMOND SUBSTRATE |
| 摘要 |
The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km−1 and equal to or lower than 1500 km−1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer. |
| 申请公布号 |
US2017009377(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201515115387 |
申请日期 |
2015.02.02 |
| 申请人 |
NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA |
发明人 |
AIDA Hideo;KOYAMA Koji;IKEJIRI Kenjiro;KIM Seongwoo |
| 分类号 |
C30B25/18;C30B29/04;C30B29/60;H01L21/78;H01L29/16;H01L29/04;H01L29/34;H01L21/02;C30B25/10;C23C16/27 |
主分类号 |
C30B25/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A diamond substrate formed of diamond single crystals, wherein a crystal plane in an interior of the diamond substrate has a curvature, and the curvature is higher than 0 km−1 and equal to or lower than 1500 km−1. |
| 地址 |
Tokyo JP |
