| 摘要 |
A thin film transistor and manufacturing method thereof, and an array substrate. Mutually independent nano conductive points (7) are formed at a thin film transistor active layer channel region, such that the active layer (4) channel region is split into plural mutually independent sub-channels, thereby increasing equivalent electric field strength. A greater equivalent electric field strength results in a greater carrier mobility. Thus, the formed thin film transistor has a larger on-state current, facilitating the manufacture of a thin film transistor having a higher resolution and aperture ratio. |
