SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH

摘要

Semiconductor devices having necked semiconductor bodies and methods of forming semiconductor bodies of varying width are described. For example, a semiconductor device includes a semiconductor body disposed above a substrate. A gate electrode stack is disposed over a portion of the semiconductor body to define a channel region in the semiconductor body under the gate electrode stack. Source and drain regions are defined in the semiconductor body on either side of the gate electrode stack. Sidewall spacers are disposed adjacent to the gate electrode stack and over only a portion of the source and drain regions. The portion of the source and drain regions under the sidewall spacers has a height and a width greater than a height and a width of the channel region of the semiconductor body.

主权项

1. A semiconductor structure, comprising:
a silicon body protruding from and continuous with an underlying bulk silicon substrate; a gate electrode over a portion of the silicon body defining a channel region in the silicon body beneath the gate electrode, the gate electrode having a first side and a second side opposite the first side, wherein the channel region comprises first and second tapered portions from a plan view perspective, the first tapered portion widening from a center of the channel region to a first end of the channel region, and the second tapered portion widening from the center of the channel region to a second end of the channel region; a first source/drain region coupled to the first end of the channel region and adjacent to the first side of the gate electrode; a second source/drain region coupled to the second end of the channel region and adjacent to the second side of the gate electrode; a first dielectric sidewall spacer adjacent to the first side of the gate electrode and over only a portion of the first source/drain region; and a second dielectric sidewall spacer adjacent to the second side of the gate electrode and over only a portion of the second source/drain region.