SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less.

主权项

1. A semiconductor device comprising:
an oxide semiconductor; a first conductor; a second conductor; a third conductor; a first insulator; and a second insulator, wherein the oxide semiconductor includes a region overlapping with the second conductor and a region overlapping with the third conductor, wherein the first conductor includes a region overlapping with the oxide semiconductor with the first insulator positioned therebetween, wherein the second insulator includes an opening, wherein the first insulator is in contact with a side surface of the second insulator in the opening, wherein the first conductor includes a region facing the side surface of the second insulator with the first insulator positioned therebetween, wherein a first region of a surface of the second conductor is in contact with the first insulator, wherein a second region of a surface of the third conductor is in contact with the first insulator, wherein in a cross section perpendicular to a bottom surface of the second conductor in a channel width direction, the first region has an angle of 30° or more and 60° or less to the bottom surface of the second conductor, and wherein in a cross section perpendicular to a bottom surface of the third conductor in a channel width direction, the second region has an angle of 30° or more and 60° or less to the bottom surface of the third conductor.