STRUCTURE TO ENABLE TITANIUM CONTACT LINER ON pFET SOURCE/DRAIN REGIONS

摘要

A semiconductor structure is provided that includes non-metal semiconductor alloy containing contact structures for field effect transistors (FETs), particularly p-type FETs. Notably, each non-metal semiconductor alloy containing contact structure includes a highly doped epitaxial semiconductor material directly contacting a topmost surface of a source/drain region of the FET, a titanium liner located on the highly doped epitaxial semiconductor material, a diffusion barrier liner located on the titanium liner, and a contact metal portion located on the diffusion barrier liner.

主权项

1. A semiconductor structure comprising:
a substrate including at least one semiconductor material portion; a functional gate structure located on a surface of said at least one semiconductor material portion, wherein a source region is located on one side of said functional gate structure and a drain region is located on another side of said functional gate structure, said source region and said drain region having a first dopant concentration; and contact structures contacting an exposed portion of said source region and said drain region of said functional gate structure, wherein each of said contact structures includes an epitaxial semiconductor material of a second dopant concentration that is greater than said first dopant concentration directly contacting a topmost surface of said source region or said drain region, a titanium liner located on said epitaxial semiconductor material, a diffusion barrier liner located on said titanium liner and a contact metal portion located on said diffusion barrier liner.