SiON GRADIENT CONCEPT

摘要

Embodiments of the present disclosure generally relate to methods and devices for use of low temperature polysilicon (LTPS) thin film transistors in liquid crystal display (LCD) and organic light-emitting diode (OLED) displays.

主权项

1. A thin film transistor, comprising:
a substrate; two dual layers disposed over the substrate, each dual layer comprising:
a first inorganic layer having a first refractive index;a second inorganic layer having a second refractive index, the first refractive index being less than the second refractive index; anda transition stack disposed between the first inorganic layer and the second inorganic layer, the transition stack comprising at least a third inorganic layer and a fourth inorganic layer, wherein:
the third inorganic layer is disposed on the first inorganic layer and has a third refractive index;the fourth inorganic layer is disposed on the third inorganic layer and has a fourth refractive index;the third refractive index is greater than the first refractive index and less than the fourth refractive index; andthe fourth refractive index is greater than the third refractive index and less than the second refractive index.