Silicon Controlled Rectifier

摘要

A silicon controlled rectifier, an electrostatic discharge (ESD) protection circuit including the silicon controlled rectifier and an integrated circuit including the silicon controlled rectifier or ESD protection circuit. The silicon controlled rectifier includes a first region having a first conductivity type and a second region having a second conductivity type located adjacent the first region in a semiconductor substrate. A junction is formed at a boundary between the first region and the second region. Contact regions of the first conductivity type and the second conductivity type located in each of the first region and the second region. A further contact region of the second conductivity type is located in the second region, in between the contact region of the first conductivity type and the junction. The further contact region and the contact region of the second conductivity type in the second region are connected together for biasing the second region.

主权项

1. A silicon controlled rectifier comprising:
a first region having a first conductivity type located in a semiconductor substrate; a second region having a second conductivity type located adjacent the first region in the semiconductor substrate, whereby a junction is formed at a boundary between the first region and the second region; a contact region of the first conductivity type and a contact region of the second conductivity type located in the first region, wherein the contact region of the second conductivity type is located between the contact region of the first conductivity type and said junction; a contact region of the first conductivity type and a contact region of the second conductivity type located in the second region, wherein the contact region of the first conductivity type is located between the contact region of the second conductivity type and said junction; and a further contact region of the second conductivity type, wherein the further contact region is located in the second region in between the contact region of the first conductivity type and said junction, wherein the further contact region and the contact region of the second conductivity type in the second region are connected together for biasing the second region.