发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed. |
申请公布号 |
US2017011994(A1) |
申请公布日期 |
2017.01.12 |
申请号 |
US201615272553 |
申请日期 |
2016.09.22 |
申请人 |
Renesas Electronics Corporation |
发明人 |
NOGUCHI Junji;OSHIMA Takayuki;MIURA Noriko;ISHIKAWA Kensuke;IWASAKI Tomio;KATSUYAMA Kiyomi;SAITO Tatsuyuki;TAMARU Tsuyoshi;YAMAGUCHI Hizuru |
分类号 |
H01L23/528;H01L23/532;H01L21/768;H01L23/522 |
主分类号 |
H01L23/528 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Tokyo JP |