ATOMIC LAYER EPITAXY FOR SEMICONDUCTOR GATE STACK LAYER FOR ADVANCED CHANNEL DEVICES

摘要

Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

主权项

1. An apparatus, comprising:
a processing chamber having a side wall and a bottom wall; an x-y actuator coupled to the bottom wall of the processing chamber; a substrate support disposed in the processing chamber, the substrate support having a processing surface and a support shaft disposed through the bottom wall and the x-y actuator; a source of pulsed laser radiation facing the processing surface; a window coupled to the processing chamber and separating the processing surface from the source of laser radiation; and a gas injector between the processing surface and the window.