发明名称 MOS Transistor Saturation Region Detector
摘要 This application relates to a circuit for determining whether a first transistor device is in a predetermined operation mode. The circuit comprises comprising: a second transistor device, wherein control terminals of the first and second transistor devices are connected, and one of input and output terminals of the first transistor device is connected to the other one of input and output terminals of the second transistor device, a buffer amplifier connected between the one of input and output terminals of the first transistor device and the other one of input and output terminals of the second transistor device, and circuitry for determining whether the first transistor device is in the predetermined operation mode based on an indication of a current flowing through the second transistor device. The application further relates to a method of determining whether a first transistor device is in a predetermined operation mode.
申请公布号 US2017010316(A1) 申请公布日期 2017.01.12
申请号 US201514792142 申请日期 2015.07.06
申请人 Dialog Semiconductor (UK) Limited 发明人 Gerna Danilo;Pardi Enrico;Kesterson John
分类号 G01R31/26;G01R1/30;G01R19/15 主分类号 G01R31/26
代理机构 代理人
主权项 1. A circuit for determining whether a first transistor device is in a predetermined operation mode, comprising: a second transistor device, wherein control terminals of the first and second transistor devices are connected, and one of input terminals or one of output terminals of the first transistor device is connected to the other one of input terminals or one of output terminals of the second transistor device; a buffer amplifier connected between the one of input and output terminals of the first transistor device and the other one of input and output terminals of the second transistor device; and circuitry for determining whether the first transistor device is in the predetermined operation mode based on an indication of a current flowing through the second transistor device.
地址 Reading GB