METHOD AND STRUCTURE OF THREE DIMENSIONAL CMOS TRANSISTORS WITH HYBRID CRYSTAL ORIENTATIONS

摘要

A method for fabricating a three-dimensional integrated circuit device includes providing a first substrate having a first crystal orientation, forming at least one or more PMOS devices overlying the first substrate, and forming a first dielectric layer overlying the one or more PMOS devices. The method also includes providing a second substrate having a second crystal orientation, forming at least one or more NMOS devices overlying the second substrate, and forming a second dielectric layer overlying the one or more NMOS devices. The method further includes coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.

主权项

1. A method for fabricating a three-dimensional integrated circuit device, the method comprising:
providing a first substrate having a first crystal orientation; forming at least one or more PMOS devices overlying the first substrate; forming a first dielectric layer overlying the one or more PMOS devices; providing a second substrate having a second crystal orientation; forming at least one or more NMOS devices overlying the second substrate; forming a second dielectric layer overlying the one or more NMOS devices; and coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.