发明名称 |
SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER |
摘要 |
A semiconductor device includes a trench formed in an epitaxial layer and an oxide layer that lines the sidewalls of the trench. The thickness of the oxide layer is non-uniform, so that the thickness of the oxide layer toward the top of the trench is thinner than it is toward the bottom of the trench. The epitaxial layer can have a non-uniform dopant concentration, where the dopant concentration varies according to the thickness of the oxide layer. |
申请公布号 |
WO2017007584(A1) |
申请公布日期 |
2017.01.12 |
申请号 |
WO2016US37815 |
申请日期 |
2016.06.16 |
申请人 |
VISHAY-SILICONIX |
发明人 |
PARK, Chanho;SHIBIB, Ayman;TERRIL, Kyle |
分类号 |
H01L29/78;H01L21/02;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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