| 发明名称 |
METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE |
| 摘要 |
The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst. |
| 申请公布号 |
US2017009371(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201415103368 |
申请日期 |
2014.12.26 |
| 申请人 |
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE |
发明人 |
HWANG Chanyong |
| 分类号 |
C30B1/08;C30B29/02;C23C16/26;C01B31/04 |
主分类号 |
C30B1/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing monocrystalline graphene, the method comprising:
forming polycrystalline graphene on a substrate using a hydrocarbon gas; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene into monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst. |
| 地址 |
Daejeon KR |
