| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
A manufacturing method of a semiconductor device includes forming an oxide semiconductor layer on an insulating layer, a part of the insulating layer being exposed from the oxide semiconductor layer, performing a plasma process by use of chlorine-containing gas on the part of the insulating layer exposed from the oxide semiconductor layer, and removing chlorine impurities from a surface layer of the exposed part of the insulating layer. The chlorine impurities may be removed by a first etching process performed by use of fluorine-containing gas. The fluorine-containing gas may contain CF4 and CHF3. The plasma process may be a second etching process performed by use of chlorine-containing gas. |
| 申请公布号 |
US2017012134(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201615189279 |
申请日期 |
2016.06.22 |
| 申请人 |
Japan Display Inc. |
发明人 |
SASAKI Toshinari;SUZUMURA Isao |
| 分类号 |
H01L29/786;H01L29/66;H01L21/4763;H01L29/417 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a semiconductor device, comprising:
forming an oxide semiconductor layer on an insulating layer, a part of the insulating layer being exposed from the oxide semiconductor layer; performing a plasma process by use of chlorine-containing gas on the part of the insulating layer exposed from the oxide semiconductor layer; and removing chlorine impurities from a surface layer of the exposed part of the insulating layer. |
| 地址 |
Tokyo JP |
