| 摘要 |
The present invention relates to a repeller for an ion implanter and an ion generating device comprising the same. According to the preset invention, it is possible to provide a part for an ion implanter and an ion generating device comprising the same, wherein a part such as a repeller, a cathode, a chamber wall, or a slit member, which constitutes an arc chamber of an ion generating device for ion implantation that is used to manufacture a semiconductor element, is provided with a semi-carbide layer-including coating structure for the purpose of thermal deformation stabilization, for the purpose of wear protection, or for the purpose of deposited material peeling resistance, thereby enabling a precise ion implantation process having no distortion of the ion generating position and no distortion of the equipment, and electrons can be evenly reflected into the arc chamber such that, by increasing the uniformity of the plasma, not only the efficiency of decomposition of the ion source gas is improved, but the service life is substantially improved compared with that of existing parts. |
