| 发明名称 |
MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD |
| 摘要 |
Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1. |
| 申请公布号 |
US2017010527(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201615275719 |
申请日期 |
2016.09.26 |
| 申请人 |
HOYA CORPORATION |
发明人 |
ORIHARA Toshihiko;HAMAMOTO Kazuhiro;KOZAKAI Hirofumi;USUI Youichi;SHOKI Tsutomu;HORIKAWA Junichi |
| 分类号 |
G03F1/48;H01L21/308;G03F7/20;G03F1/22;G03F7/16 |
主分类号 |
G03F1/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transmissive mask blank comprising a light shielding function film to be a transfer pattern on the main surface of a mask blank substrate, wherein the surface of the light shielding function film has a power spectrum density of not more than 10 nm4, obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 1 μm−1 and not more than 10 μm−1. |
| 地址 |
Tokyo JP |
