| 发明名称 |
HIGH-PRESSURE ANNEAL |
| 摘要 |
A method of treating a semiconductor device is provided including the steps of loading the semiconductor device in a processing chamber, pressurizing the processing chamber by supplying a processing gas from a pressure chamber to the processing chamber, performing a thermal anneal of the semiconductor device in the processing chamber, and depressurizing the processing chamber by supplying the processing gas from the processing chamber to the pressure chamber. |
| 申请公布号 |
US2017011932(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201514791784 |
申请日期 |
2015.07.06 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Pethe Wieland;Noack Dirk;Kallauch Bernd |
| 分类号 |
H01L21/324;F27B17/00;H01L21/67;H01L21/28;H01L29/66 |
主分类号 |
H01L21/324 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of treating a semiconductor device, the method comprising:
loading said semiconductor device in a processing chamber; pressurizing said processing chamber by supplying a processing gas from a pressure chamber to said processing chamber; performing a thermal anneal of said semiconductor device in said pressurized processing chamber in the presence of said processing gas; and depressurizing said pressurized processing chamber by supplying said processing gas from said processing chamber to said pressure chamber. |
| 地址 |
Grand Cayman KY |
