ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION SYSTEM

摘要

An atomic layer deposition apparatus and an atomic layer deposition system, capable of reducing space for installing the apparatus and significantly improving production speed by forming a thin film on a surface of each of a plurality of rectangular substrates by rotating the substrates with respect to a gas spray portion, with the substrates being supported by one substrate support portion. The atomic layer deposition apparatus includes: a vacuum chamber; a gas supply portion, which is provided above or below the vacuum chamber, and which supplies gas so that a thin film is deposited on a surface of each of substrates; and a substrate support portion, which is provided in the vacuum chamber so as to horizontally rotate about the gas supply portion, and which supports the two or more rectangular substrates arranged in the circumferential direction with respect to the center of rotation of the substrate support portion.

主权项

1. An atomic layer deposition apparatus comprising:
a vacuum chamber; a gas injection unit installed above or below the vacuum chamber to supply a gas so that a thin film is deposited on a surface of a substrate; and a substrate support unit installed in the vacuum chamber to relatively and horizontally rotate with respect to the gas injection unit and supporting two or more rectangular substrates arranged in a circumferential direction with respect to a center of rotation thereof, wherein the gas injection unit comprises at least one source gas injection unit arranged in a rotational direction of the substrate to spray source gas and at least one reaction gas injection unit for spraying reaction gas that is in a plasma state, an exhaust unit for absorbing and exhausting the gas is installed on at least one area between the injection units, a mask having at least one opening defined in a surface, which faces the gas injection unit, is closely attached to the substrate supported by the substrate support unit, and the atomic layer deposition apparatus further comprises at least one alignment unit for aligning relative positions of the substrate and the mask.