| 发明名称 |
INCREASED CONTACT AREA FOR FINFETS |
| 摘要 |
A method for forming fin field effect transistors includes epitaxially growing source and drain (S/D) regions on fins, the S/D regions including a diamond-shaped cross section and forming a dielectric liner over the S/D regions. A dielectric fill is etched over the S/D regions to expose a top portion of the diamond-shaped cross section. The fins are recessed into the diamond-shaped cross section. A top portion of the diamond-shaped cross section of the S/D regions is exposed. A contact liner is formed on the top portion of the diamond-shaped cross section of the S/D regions and in a recess where the fins were recessed. Contacts are formed over surfaces of the top portion and in the recess. |
| 申请公布号 |
US2017012129(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201514794997 |
申请日期 |
2015.07.09 |
| 申请人 |
GLOBAL FOUNDRIES U.S. 2 LLC. |
发明人 |
Basker Veeraraghavan S.;Lin Chung-Hsun;Liu Zuoguang;Yamashita Tenko;Yeh Chun-Chen |
| 分类号 |
H01L29/78;H01L21/311;H01L29/08;H01L29/66;H01L29/417;H01L21/8234;H01L21/3065 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming fin field effect transistors, comprising:
epitaxially growing source and drain (S/D) regions on fins, the S/D regions including a diamond-shaped cross section; forming a dielectric liner over the S/D regions; etching a dielectric fill formed over the S/D regions to expose a top portion of the diamond-shaped cross section; recessing the fins into the diamond-shaped cross section; exposing an outer surface of the diamond-shaped cross section of the S/D regions; forming a contact liner on the exposed outer surface of the diamond-shaped cross section of the S/D regions and in a recess where the fins were recessed; and forming contacts over surfaces of the top portion and in the recess. |
| 地址 |
Hopewell Junction NY US |
