METHOD FOR MAPPING CRYSTAL ORIENTATIONS IN A SAMPLE MADE OF A POLYCRYSTALLINE MATERIAL

摘要

The invention relates to a method for mapping the crystal orientations of a polycrystalline material, the method comprising:
receiving (21) a series of images of the polycrystalline material, which images are acquired by an acquiring device in respective irradiation geometries;estimating (22) at least one intensity profile for at least one point of the material from the series of images, each intensity profile representing the intensity associated with the point in question as a function of irradiation geometry; anddetermining (24) a crystal orientation for each point in question of the material by comparing (23) the intensity profile associated with said point in question to theoretical signatures of intensity profiles of known crystal orientations, which signatures are contained in a database.

主权项

1. A method for mapping the crystal orientations of a sample having a polished surface, the method comprising:
receiving a series of images of the sample, which images are acquired by an acquiring device suitable for emitting a beam of charged particles onto the polished surface, the images being acquired in different sample irradiation geometries, each image including pixels representing the intensities of points of the sample in a respective irradiation geometry; estimating at least one intensity profile for at least one point of the material from the series of images, each intensity profile representing the intensity associated with the point in question as a function of irradiation geometry; and determining a crystal orientation for each point in question of the material by comparing the intensity profile associated with said point in question to theoretical signatures of intensity profiles of known crystal orientations, which signatures are contained in a database.