PROCESS FOR PRODUCING A TARGET FORMED OF A SINTERING-RESISTANT MATERIAL OF A HIGH-MELTING POINT METAL ALLOY, SILICIDE, CARBIDE, NITRIDE OR BORIDE

摘要

A target is formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target are bonded. A production method of such a target is provided. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

主权项

1. A production method of a composite sputtering target including a sputtering target comprising a sintered body formed of a powder of a sinter-resistant material of an alloy of high-melting point metals or a silicide, carbide, nitride or boride of a high-melting point metal, comprising the steps of:
placing a secondary plate having a thickness of 2 to 6 mm and made of a high-melting point metal different from the high-melting point metals constituting the alloy or the high melting point metal of the silicide, carbide, nitride or boride of the sputtering target in a die; filling the die with powder formed of the alloy of high-melting point metals or the silicide, carbide, nitride or boride of the high-melting point metal of the sinter-resistant material of the sputtering target, the high-melting point metal or metals of the sputtering target having a melting point of 1700° C. or higher; additionally inserting a further secondary plate made of a high-melting point metal different from the metal or metals of the sputtering target on the filled powder to obtain a trilaminar structure; subsequently subjecting the trilaminar structure to pressing and diffusion bonding such that the powder of the sinter-resistant material in the die is converted to a sintered plate; removing the trilaminar structure from the die, and bonding the trilaminar structure to a backing plate formed of copper or a copper alloy plate via an insert material formed of aluminum or an alloy having aluminum as its main component; and machining and eliminating the further secondary plate to obtain the composite sputtering target; wherein the high melting point metal of the secondary plate and the high melting point metal of the further secondary plate used in the placing and inserting steps have a melting point of 1700° C. or higher; and wherein said machining and eliminating steps are performed after said step of bonding the trilaminar structure to the backing plate.