| 摘要 |
The optoelectronic component (100) comprises a semiconductor layer sequence (1) having a first layer (10), a second layer (12) and an active layer (11) arranged between the first layer (10) and the second layer (12), wherein the active layer (11) directly adjoins the first layer (10) and the second layer (12). A radiation surface (13) directly adjoins the second layer (12). Moreover, the component (100) comprises a plurality of contact islands (20) for electrically contacting the first layer (10) and a plurality of plated-through holes (23) for electrically contacting the second layer (12). The plated-through holes (23) are led through the first layer (10) and the active layer (11) and lead into the second layer (12). The contact islands (20) are applied laterally alongside one another directly on a rear side (15) of the first layer (10) facing away from the radiation surface (13). In a plan view of the rear side (15), the plated-through holes (23) are arranged in regions between the contact islands (20). Each contact island (20) is laterally completely surrounded by an electrical insulation region (3) and is spaced apart from the other contact islands (20) in a lateral direction by the insulation region (3). A sheet resistance of the second layer (12) is at most one quarter of a lateral sheet resistance of the first layer (10). |
