| 发明名称 |
DUAL MODE III-V SUPERLATTICE AVALANCHE PHOTODIODE |
| 摘要 |
In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply holes and a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons. The first and second superlattice structures include III-V semiconductor material. The avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. In another aspect, a method includes fabricating the avalanche diode. |
| 申请公布号 |
US2017012162(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201514792962 |
申请日期 |
2015.07.07 |
| 申请人 |
Raytheon Company |
发明人 |
Ghosh Siddhartha |
| 分类号 |
H01L31/107;H01L31/0352;G06F17/50;H01L31/0304 |
主分类号 |
H01L31/107 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An avalanche photodiode, comprising:
an absorber; a first superlattice structure directly connected to the absorber and configured to multiply holes, the first superlattice structure comprising III-V semiconductor material; a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons, the second superlattice structure comprising III-V semiconductor material; wherein the avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. |
| 地址 |
Waltham MA US |
