GERMANIUM-BASED QUANTUM WELL DEVICES

摘要

A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.

主权项

1. A microelectronic device, comprising:
a germanium quantum well channel region transistor, comprising:
a lower barrier region;a germanium channel region on the lower barrier region;an upper barrier region on the germanium channel region;a gate dielectric on the upper barrier region; anda gate electrode on the gate dielectric; a group III-V material quantum well channel region transistor, comprising:
a lower barrier region;a group III-V material channel region on the lower barrier region;an upper barrier region on the germanium channel region;a gate dielectric on the upper barrier region; anda gate electrode on the gate dielectric; and an isolation region disposed between the germanium quantum well region transistor and the group III-V material quantum well channel region transistor.