METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS

摘要

A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer.

主权项

1. A semiconductor device comprising:
a silicon carbide substrate having a first main surface and a second main surface opposing the first main surface; an active epitaxial device layer on the first main surface of the silicon carbide substrate; a dimple extending from the second main surface into the silicon carbide substrate toward the first main surface; a first electrical contact over the active epitaxial device layer; and a second electrical contact overlying the second main surface and within the dimple.