发明名称 INVISIBLE LIGHT FLAT PLATE DETECTOR AND MANUFACTURING METHOD THEREOF, IMAGING APPARATUS
摘要 The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field of detection technology, can solve problems that the structure of the invisible light flat plate detector in the prior art is complex and the manufacturing method thereof is tedious. The invisible light flat plate detector of the present invention comprises a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, each of the detection units comprising a thin film transistor provided on a substrate, and a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module, a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate.
申请公布号 US2017012067(A1) 申请公布日期 2017.01.12
申请号 US201615107209 申请日期 2016.01.26
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 JIANG Feng;LIU Xingdong;LEE Chungchun
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. An invisible light flat plate detector, comprising a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, wherein each of the detection units comprises a thin film transistor provided on a substrate, as well as a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module and a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate; the semiconductor photoelectronic conversion module is configured to convert the visible light into an electronic signal; the second electrode is directly in contact with the semiconductor photoelectronic conversion module, said second electrode is configured for stabilizing the electronic signal converted by the semiconductor photoelectronic conversion module; the first electrode is electrically connected with a source electrode of the thin film transistor via a through hole penetrating through the first insulation layer, said first electrode is configured for transmitting the electronic signal stabilized by the second electrode to the thin film transistor, and transmitting the electronic signal to a data processing circuit when the thin film transistor is turned on.
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