发明名称 |
APPARATUS AND METHOD FOR MEASURING LOAD CURRENT BY APPLYING COMPENSATED GAIN TO VOLTAGE DERIVED FROM DRAIN-TO-SOURCE VOLTAGE OF POWER GATING DEVICE |
摘要 |
Apparatus and method are disclosed for measuring a load current supplied to one or more integrated circuit cores. The apparatus includes a power gating field effect transistor (FET) comprising a gate, a source, and a drain, wherein the source is coupled to a voltage rail, wherein the drain is coupled to a load, and wherein the gate is configured to receive a gating voltage to selectively turn on the power gating FET to allow a load current to flow between the voltage rail and the load; and a differential amplifier configured to generate a current-related voltage related to the load current by applying a gain to an input voltage based on a drain-to-source voltage of the power gating FET, wherein the gain varies inversely with the input voltage in response to variation in temperature or gate-to-source voltage of the power gating FET. |
申请公布号 |
US2017010312(A1) |
申请公布日期 |
2017.01.12 |
申请号 |
US201514794496 |
申请日期 |
2015.07.08 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Nix Michael Arn |
分类号 |
G01R19/32 |
主分类号 |
G01R19/32 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus, comprising:
a power gating field effect transistor (FET) comprising a gate, a source, and a drain, wherein the source is coupled to a voltage rail, wherein the drain is coupled to a load, and wherein the gate is configured to receive a gating voltage to selectively turn on the power gating FET to allow a load current to flow between the voltage rail and the load by way of the power gating FET; and a differential amplifier configured to generate a current-related voltage related to the load current by applying a gain to an input voltage, wherein the input voltage is based on a drain-to-source voltage of the power gating FET, and wherein the gain varies inversely with the input voltage in response to variation in temperature or gate-to-source voltage of the power gating FET. |
地址 |
San Diego CA US |