发明名称 APPARATUS AND METHOD FOR MEASURING LOAD CURRENT BY APPLYING COMPENSATED GAIN TO VOLTAGE DERIVED FROM DRAIN-TO-SOURCE VOLTAGE OF POWER GATING DEVICE
摘要 Apparatus and method are disclosed for measuring a load current supplied to one or more integrated circuit cores. The apparatus includes a power gating field effect transistor (FET) comprising a gate, a source, and a drain, wherein the source is coupled to a voltage rail, wherein the drain is coupled to a load, and wherein the gate is configured to receive a gating voltage to selectively turn on the power gating FET to allow a load current to flow between the voltage rail and the load; and a differential amplifier configured to generate a current-related voltage related to the load current by applying a gain to an input voltage based on a drain-to-source voltage of the power gating FET, wherein the gain varies inversely with the input voltage in response to variation in temperature or gate-to-source voltage of the power gating FET.
申请公布号 US2017010312(A1) 申请公布日期 2017.01.12
申请号 US201514794496 申请日期 2015.07.08
申请人 QUALCOMM Incorporated 发明人 Nix Michael Arn
分类号 G01R19/32 主分类号 G01R19/32
代理机构 代理人
主权项 1. An apparatus, comprising: a power gating field effect transistor (FET) comprising a gate, a source, and a drain, wherein the source is coupled to a voltage rail, wherein the drain is coupled to a load, and wherein the gate is configured to receive a gating voltage to selectively turn on the power gating FET to allow a load current to flow between the voltage rail and the load by way of the power gating FET; and a differential amplifier configured to generate a current-related voltage related to the load current by applying a gain to an input voltage, wherein the input voltage is based on a drain-to-source voltage of the power gating FET, and wherein the gain varies inversely with the input voltage in response to variation in temperature or gate-to-source voltage of the power gating FET.
地址 San Diego CA US