| 发明名称 |
AlGaInP-BASED SEMICONDUCTOR LASER |
| 摘要 |
An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp≦1), and xn and xp satisfy a relationship of xn<xp. |
| 申请公布号 |
US2017012410(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201615210904 |
申请日期 |
2016.07.15 |
| 申请人 |
USHIO OPTO SEMICONDUCTORS, INC. |
发明人 |
HAGIMOTO Masato;FUKAI Haruki;KIYOSUMI Tsutomu;SASAKI Shinji;KAWANAKA Satoshi |
| 分类号 |
H01S5/32;H01S5/343;H01S5/30;H01S5/022;H01S5/22 |
主分类号 |
H01S5/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1: A semiconductor laser chip comprising:
an n-type cladding layer having a composition of (AlxnGa1-xn)0.5In0.5P where 0.9<xn<0.98; a p-type cladding layer having a composition of (AlxpGa1-xp)0.5In0.5P where 0.92<xp<=1; an active layer provided between the n-type cladding layer and the p-type cladding layer, wherein the Al composition ratio xp of the p-type cladding layer and the Al composition ratio xn of the n-type cladding layer satisfies a relationship of xn<xp, wherein a difference between the Al composition ratio xp of the p-type cladding layer and the Al composition ratio xn of the n-type cladding layer satisfies a relationship of 0.02<=xp−xn<=0.08. |
| 地址 |
Tokyo JP |
