SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A germanium optical receiver in which a dark current is small is achieved. The germanium optical receiver is formed of a p-type germanium layer, a non-doped i-type germanium layer, and an n-type germanium layer that are sequentially stacked on an upper surface of a p-type silicon core layer, a first cap layer made of silicon is formed on the side surface of the i-type germanium layer, and a second cap layer made of silicon is formed on the upper surface and side surface of the n-type germanium layer. The n-type germanium layer is doped with such an element as phosphorus or boron having a covalent bonding radius smaller than a covalent bonding radius of germanium.

主权项

1. A semiconductor device comprising:
a silicon core layer; a first germanium layer of a first conductive type formed on an upper surface of the silicon core layer; a non-doped second germanium layer formed on an upper surface of the first germanium layer; a third germanium layer of a second conductive type different from the first conductive type, the third germanium layer being formed on an upper surface of the second germanium layer; and a cap layer formed on an upper surface of the third germanium layer, wherein the third germanium layer is doped with an element having a covalent bonding radius smaller than a covalent bonding radius of germanium.