| 主权项 |
1. A wafer processing method for dividing a wafer on which a plurality of devices are formed on a front surface and are marked out by planned dividing lines into individual device chips, the wafer processing method comprising:
a protective member disposing step of disposing a protective member on the front surface of the wafer; a modified layer forming step of positioning a light focus point of a pulse laser beam having such a wavelength as to be transmitted through the wafer on which the protective member is disposed at inside of the wafer along the planned dividing lines and irradiating the wafer with the pulse laser beam with predetermined power to form modified layers and cracks extending from the modified layers toward the front surface and a back surface; and a back surface grinding step of, after carrying out the modified layer forming step, holding a side of the protective member on a chuck table and grinding the back surface of the wafer by a grinding wheel under a predetermined grinding condition to divide the wafer into the individual device chips and carrying out grinding until the modified layers are removed and thickness of the wafer reaches a target finished thickness, wherein the predetermined power of the pulse laser beam set in the modified layer forming step is set to power that forms the modified layers and the cracks in such a manner that the wafer is allowed to be divided into the individual device chips before the thickness of the wafer reaches the target finished thickness and, after the wafer is divided into the individual device chips, a time until the thickness of the wafer reaches the target finished thickness is such a time that damage due to rubbing of the individual device chips against each other is not caused through grinding under the predetermined grinding condition set in the back surface grinding step. |
