| 发明名称 |
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD |
| 摘要 |
A semiconductor substrate manufacturing method includes: epitaxially growing a columnar III nitride semiconductor single crystal on a principal place of a circular substrate; removing a hollow cylindrical region at an outer peripheral edge side of the III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the III nitride semiconductor single crystal; and slicing the solid columnar region after removing the hollow cylindrical region. The hollow cylindrical region is removed such that the shape of the III nitride semiconductor single crystal is always keeps an axial symmetry that a center axis of the III nitride semiconductor single crystal is defined as a symmetric axis. |
| 申请公布号 |
US2017009378(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201415114364 |
申请日期 |
2014.01.28 |
| 申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
SHIBATA Masatomo;YOSHIDA Takehiro;KITAMURA Toshio;ABE Yukio |
| 分类号 |
C30B33/00;C30B29/40;B28D5/04;H01L29/20;H01L29/04;B28D5/02;C30B25/02;C30B29/60 |
主分类号 |
C30B33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor substrate, comprising:
epitaxially growing a columnar group III nitride semiconductor single crystal on a principal plane of a circular substrate; removing a hollow cylindrical region at an outer peripheral edge side of the group III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the group III nitride semiconductor single crystal; and slicing the solid columnar region after removing the hollow cylindrical region, wherein the removing of the hollow cylindrical region is carried out such that a shape of the group III nitride semiconductor single crystal always keeps an axial symmetry that a central axis of the semiconductor crystal is defined as a symmetry axis. |
| 地址 |
Tokyo JP |
