SEMICONDUCTOR ELEMENT PRODUCTION METHOD

摘要

The semiconductor element (12) production method comprises steps of: forming a plurality of semiconductor elements (12) on the main surface of a wafer (11); forming a plurality of cleaving groove groups (20), each disposed on a division reference line; and cleaving the wafer (11) along the division reference line (14) to separate each of the plurality of semiconductor elements (12) from one another. At least one of the plurality of cleaving groove groups (20) is disposed with respect to four semiconductor elements (12) adjacent to one another among the plurality of semiconductor elements (12). Each of the plurality of cleaving groove groups (20) contains a plurality of cleaving grooves (21, 22, 23) disposed on the division reference line (14). In this manner, the production yield for the semiconductor elements (12) may be improved.