| 发明名称 |
CMOS FIN INTEGRATION ON SOI SUBSTRATE |
| 摘要 |
A method for complementary metal oxide semiconductor (CMOS) fin integration includes recessing a fin structure buried in a dielectric fill to form a trench in the dielectric fill having a fin portion remaining at a bottom thereof. A new fin is epitaxially grown in the trench from the fin portion. The new fin included SiGe. |
| 申请公布号 |
US2017011969(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201615058865 |
申请日期 |
2016.03.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Leobandung Effendi;Yamashita Tenko |
| 分类号 |
H01L21/8238;H01L21/02;H01L21/84 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for complementary metal oxide semiconductor (CMOS) fin integration, comprising:
recessing a fin structure buried in a dielectric fill to form a trench in the dielectric fill having a fin portion remaining at a bottom thereof; epitaxially growing a new fin in the trench from the fin portion, the new fin including SiGe; and thermally mixing Ge from the SiGe fin into the fin portion remaining at the bottom of the trench. |
| 地址 |
Armonk NY US |
