NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory includes a memory cell array, a row decoder circuit, and a page buffer circuit. The row decoder circuit applies a turn-on voltage to string selection lines, which are connected to string selection transistors of a selected memory block, at a first precharge operation in response to a write command received from an external device. The page buffer circuit applies, in response to the write command, a first voltage to bit lines, which are connected to the string selection transistors, through a first precharge circuit at the first precharge operation regardless of loaded data and applies the first voltage and a second voltage to the bit lines through a second precharge circuit at a second precharge operation based on the loaded data. During the first precharge operation, write data is loaded onto the page buffer circuit.

主权项

1. A nonvolatile memory device comprising:
a memory cell array including a plurality of memory blocks each including a plurality of cell strings, each cell string including a ground selection transistor, a plurality of memory cells, and a string selection transistor; a row decoder circuit configured to apply a turn-on voltage to string selection lines, which are connected to string selection transistors of a selected memory block, at a first precharge operation in response to a write command received from an external device; and a page buffer circuit configured to apply, in response to the write command, a first voltage to bit lines, which are connected to the string selection transistors, through a first precharge circuit at the first precharge operation regardless of loaded data and to apply the first voltage and a second voltage lower than the first voltage to the bit lines through a second precharge circuit at a second precharge operation based on the loaded data, wherein write data is loaded onto the page buffer circuit during the first precharge operation.