| 发明名称 |
ATOMIC LAYER DEPOSITION OF GERMANIUM OR GERMANIUM OXIDE |
| 摘要 |
A process of depositing germanium on a substrate includes sequentially exposing in at least one deposition cycle the substrate inside a chamber with a Ge-containing precursor and a reducing or oxidizing precursor. |
| 申请公布号 |
EP3114248(A1) |
申请公布日期 |
2017.01.11 |
| 申请号 |
EP20140884332 |
申请日期 |
2014.03.04 |
| 申请人 |
Picosun Oy |
发明人 |
LI, Wei-Min |
| 分类号 |
H01L21/20;C23C16/22;C23C16/40;C23C16/455;H01L21/314 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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