发明名称 METHOD FOR PREPARING A THIN ABSORBER LAYER MADE FROM SULFIDE(S) AND SELENIDE(S) OF COPPER, ZINC AND TIN, ANNEALED THIN LAYER AND PHOTOVOLTAIC DEVICE OBTAINED
摘要 The present invention provides a compact, coarse-grained crystalline thin layer of absorbing material consisting essentially of sulfide(s) and selenide(s) of Cu, Zn and Sn, with fewer defects and preferably with an improved homogeneity of composition and/or a reduced secondary phase content, by carrying out a method of double annealing, in predefined atmospheres, of a thin layer of particles of one said absorbing material made from sulfide(s) of copper, zinc and tin, preferably CZTS, deposited in the form of a hydroalcoholic dispersion of particles in which the coarse agglomerates have been eliminated, on a substrate covered with molybdenum (Mo), said thin annealed absorber layer deposited on said substrate Mo giving improved photovoltaic performances to a photovoltaic device comprising same.
申请公布号 EP3114704(A1) 申请公布日期 2017.01.11
申请号 EP20150732821 申请日期 2015.05.29
申请人 IMRA Europe SAS 发明人 JACOB, Alain;CHONE, Christophe;LARRAMONA, Gerardo;DELATOUCHE, Bruno;BOURDAIS, Stéphane;DENNLER, Gilles
分类号 H01L21/368;H01L31/18 主分类号 H01L21/368
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