发明名称 |
Thick single crystal diamond layer, method for making it, and gemstones produced from the layer |
摘要 |
A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer. The method involves the homoepitaxial growth of the diamond layer on a low defect density substrate in an atmosphere containing less than 300ppb nitrogen. Gemstones can be manufactured from the layer. |
申请公布号 |
EP1632590(B1) |
申请公布日期 |
2017.01.11 |
申请号 |
EP20050077372 |
申请日期 |
2001.06.14 |
申请人 |
Element Six Technologies Limited |
发明人 |
Scarsbrook, Geoffrey Alan;Martineau, Philip Maurice;Dorn, Bärbel Susanne Charlotte;Cooper, Andrew Michael;Collins, John Lloyd;Whitehead, Andrew John;Twitchen, Daniel James |
分类号 |
C30B25/02;A44C17/00;B01J3/06;C23C16/27;C30B25/10;C30B25/18;C30B25/20;C30B29/04;C30B33/00;H01L21/205;H01L21/3065 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|