| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulating layer material which increases the dielectric constant of an organic thin-film transistor and reduces the leakage current thereof.SOLUTION: The insulating layer material contains: a polymer compound (A) which contains a repeating unit containing a cyclic ether structure and a repeating unit represented by the following formula; a novolac type epoxy resin (B); a fluororesin (C) which contains a repeating unit represented by a specific formula and a repeating unit represented by another specific formula; and a compound (D) capable of generating an acid by irradiation with electromagnetic waves or electron beams or by the action of heat. [In the formula, Rrepresents a hydrogen atom or a methyl group, and Rand Reach independently represent a hydrogen atom or a C1-C20 organic group.] |
