| 摘要 |
The present disclosure relates to a MoS 2 thin film and a method for manufacturing the same. The present disclosure provides a MoS 2 thin film and a method for manufacturing the same using an atomic layer deposition method. In particular, the MoS 2 thin film is manufactured by an atomic layer deposition method without using a toxic gas such as H 2 S as a sulfur precursor. Thus, the present disclosure is eco-friendly. Furthermore, it is possible to prevent the damage and contamination of manufacturing equipment during the manufacturing process. In addition, it is possible to manufacture the MoS 2 thin film by precisely controlling the thickness of the MoS 2 thin film to the level of an atomic layer. |
