发明名称 トランジスタ
摘要 A transistor includes: a semiconductor substrate; a first electrode on the semiconductor substrate and having first and second portions; a second electrode on the semiconductor substrate and spaced apart from the first electrode; a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode; and a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode.
申请公布号 JP6057145(B2) 申请公布日期 2017.01.11
申请号 JP20120085642 申请日期 2012.04.04
申请人 株式会社村田製作所 发明人 佐々木 善伸;久留須 整
分类号 H01L21/331;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L27/082;H01L29/73 主分类号 H01L21/331
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