| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth control agent for suppressing increase in the crystal size of a p-type semiconductor, while allowing chemical modification of the p-type semiconductor fine particle surface, and to provide a formation method of a p-type semiconductor fine particle or a p-type semiconductor fine particle film using this crystal growth control agent, a composition for forming a hole transport layer of solar cell, and a solar cell using this composition for forming a hole transport layer.SOLUTION: A crystal growth control agent is composed of at least one kind of sulfur-containing compound (excepting thiocyanate) selected from a group consisting of a compound generating thiolate anion by dissociation of proton or cation, and controls crystal growth of a p-type semiconductor. By crystallizing a p-type semiconductor in the presence of the crystal growth control agent, p-type semiconductor fine particles can be formed while suppressing increase in the crystal size. |
