发明名称 |
CMOS-BASED SEMICONDUCTOR DEVICE ON MICRO-HOTPLATE AND METHOD OF FABRICATION |
摘要 |
It is disclosed herein a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device is made using partly CMOS or CMOS based processing steps, and it includes a semiconductor substrate, a dielectric region over the semiconductor substrate, a heater within the dielectric region and a patterned layer of noble metal above the dielectric region. The method includes the deposition of a photoresist material over the dielectric region, and patterning the photo-resist material to form a patterned region over the dielectric region. The steps of depositing the photo-resist material and patterning the photo-resist material may be performed in sequence using similar photolithography and etching steps to those used in a CMOS process. The resulting semiconductor device is then subjected to further processing steps which ensure that a dielectric membrane and a metal structure within the membrane are formed in the patterned region over the dielectric region. |
申请公布号 |
EP3114467(A1) |
申请公布日期 |
2017.01.11 |
申请号 |
EP20150707746 |
申请日期 |
2015.02.27 |
申请人 |
Cambridge CMOS Sensors Limited |
发明人 |
UDREA, Florin;ALI, Syed Zeeshan;GARDNER, Julian |
分类号 |
G01N27/14;H05B3/26 |
主分类号 |
G01N27/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|